发明名称 |
SEMICONDUCTOR LASER |
摘要 |
A semiconductor laser device (30) includes a layered structure formed on an n-type GaAs substrate (32) having a bandgap energy Eg1 and including an n-type AlGaAs cladding layer (34), an active layer (36) including a quantum-well structure of two layers InGaAs/GaAs having a bandgap energy Eg2 which is smaller than Eg1, a p-type AlGaAs cladding layer (38), and a p-type GaAs cap layer (40), which are consecutively epitaxially grown. The cap layer and the upper portion of the p-type cladding layer are formed as a stripe-shaped mesa structure. An SiN passivation film (42) is formed on the areas except for the top of the cap layer. On the exposed cap layer and the passivation layer a p-side electrode (44) is formed. On the bottom surface of the substrate an n-side electrode (46) including layered metal films of In/AuGe/Ni/An is formed. An absorption medium layer is interposed between the GaAs substrate and the n-side electrode. <IMAGE> |
申请公布号 |
EP1152505(A4) |
申请公布日期 |
2005.11.23 |
申请号 |
EP20000976276 |
申请日期 |
2000.11.16 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
YAMAGUCHI, TAKEHARU;MUKAIHARA, TOSHIKAZU;KASUKAWA, AKIHIKO |
分类号 |
H01S5/20;H01L21/24;H01S5/02;H01S5/042;H01S5/22;H01S5/343 |
主分类号 |
H01S5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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