PROCESS FOR PRODUCING ETCHING RESISTANT FILM, SURFACE CURED RESIST PATTERN, PROCESS FOR PRODUCING SURFACE MODIFIED RESIST PATTERN, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

The present invention provides a surface-modified resist pattern which contains a resist pattern having low etch resistance by itself but having a modified and etch-resistant surface and is suitable for fine and high-definition patterning, and a method for efficiently forming the same. The method forms a surface-modified resist pattern having an etch-resistant surface by selectively depositing an organic compound on a resist pattern. The deposition is preferably carried out by using plasma of a gas. The method preferably includes arranging the organic compound so as to face the resist pattern, the organic compound having been deposited on a base material, and depositing the organic compound onto the resist pattern. The plasma of the gas is preferably introduced from an opposite side of the base material to the organic compound deposited thereon.