| 摘要 |
<p>A semiconductor device includes a substrate (211), an insulation film (215, 218, 222, 223) formed above the substrate (211) and containing silicon-fluorine bonds, and a titanium-based metal wiring layer (213, 217, 220) formed on the insulation film (215, 218, 222, 223), the titanium-based metal wiring layer (213, 217, 220) containing fluorine which is diffused from the insulation film (215, 218, 222, 223) and has a fluorine concentration of less than 1 x 10<2><0> atoms/cm<3>. <MATH></p> |
