发明名称 |
SEMICONDUCTOR DEVICE COMPRISING FINFET AND FABRICATING METHOD THEREOF |
摘要 |
<p>In one aspect, a semiconductor substrate is provided having a cell area and a peripheral circuit area, and a mask layer is formed over the cell area and the peripheral circuit area of the semiconductor substrate. A FinFET gate is fabricated by forming a first opening in the mask layer to expose a first gate region in the cell area of the semiconductor substrate, and then forming a FinFET gate electrode in the first opening using a damascene process. A MOSFET gate fabricated by forming a second opening in the mask layer to expose a second gate region in the peripheral circuit area of the semiconductor substrate, and then forming a MOSFET gate electrode in the second opening using a damascene process.</p> |
申请公布号 |
KR20050110081(A) |
申请公布日期 |
2005.11.22 |
申请号 |
KR20040034903 |
申请日期 |
2004.05.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, HEE SOO;PARK, DONG GUN;LEE, CHOONG HO;CHO, HYE JIN;AHN, YOUNG JOON |
分类号 |
H01L29/78;H01L21/00;H01L21/336;H01L21/822;H01L21/8244;H01L21/84;H01L27/06;H01L27/11;H01L27/12;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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