发明名称 Low profile antenna
摘要 A low profile antenna having relatively high radiation resistance, wide bandwidth and which utilizes a single conductor and RF source is disclosed. In accordance with an exemplary embodiment, the upper horizontal portion and the lower horizontal portion of the double inverted-L antenna are respectively brought down and up (without being physically connected) at a distance of approximately 180 degrees (½lambda) from the RF source so as to form two additional vertical portions of the antenna. This is followed by two approximately 90-degree (¼lambda) horizontal conductors portion. The resulting radiation resistance of the low profile antenna is approximately three-times that of a double inverted-L antenna.
申请公布号 US6967629(B2) 申请公布日期 2005.11.22
申请号 US20040781806 申请日期 2004.02.20
申请人 MICRON TECHNOLOGY, INC. 发明人 CUTHBERT DAVID R.
分类号 H01Q9/30;H01Q9/38;H01Q11/12;H01Q21/00;(IPC1-7):H01Q21/00 主分类号 H01Q9/30
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