Method of forming self-aligned contact in fabricating semiconductor device

摘要

According to some embodiments of the invention, a method of forming a self-aligned contact of a semiconductor device includes forming a plurality of conductive lines that are spaced apart from each other and pass over a plurality of conductive regions. An insulating layer is formed over and between the conductive lines. A plurality of contact holes are then formed to selectively expose the conductive regions by selectively removing the insulating layer without exposing the conductive lines. The contact holes are extended using an isotropic etching until the conductive lines begin to be exposed. Thereafter, contacts are formed in the contact holes such that the contacts are coupled to the conductive regions.