| 发明名称 |
Group III-nitride on Si using epitaxial BP buffer layer |
| 摘要 |
A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer.
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| 申请公布号 |
US6967355(B2) |
申请公布日期 |
2005.11.22 |
| 申请号 |
US20030691055 |
申请日期 |
2003.10.22 |
| 申请人 |
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. |
发明人 |
KRYLIOUK OLGA;ANDERSON TIM;BCHIR OMAR J.;KIM KEE CHAN |
| 分类号 |
H01L21/20;H01L21/205;H01L27/15;H01L33/00;H01L33/12;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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