| 摘要 |
A non-volatile semiconductor memory device includes: a cell array having electrically rewritable and non-volatile memory cells disposed at the respective intersections of word lines and bit lines intersecting each other; a row decoder circuit for selectively driving a word line of the cell array; a sense amplifier circuit disposed in communication with the cell array for data reading and writing; and a controller for executing sequence control of data write and erase, wherein in a data erase cycle controlled by the controller to erase memory cells disposed along at least one selected word line of the cell array, an adjacent/non-selected word line which is non-selected and adjacent to the selected word line in non-selected words lines in the cell array is precharged to a first erase-inhibition voltage, while the remaining non-selected word lines are precharged to a second erase-inhibition.
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