发明名称 |
Nitrogen implantation using a shadow effect to control gate oxide thickness in DRAM semiconductor |
摘要 |
Process for forming dual gate oxides for DRAMS by incorporating different thicknesses of gate oxides by using nitrogen implantation. Either angled nitrogen implantation or nitride spacers is used to create a "shadow effect" or area, which limits the nitrogen dose close to the edges of the active area. The reduction of nitrogen dose leads to an increased gate oxide thickness at the active area (AA) adjacent to the shallow trench, increases the threshold of the parasitic corner device and reduces sub Vt (threshold voltage) and junction leakage.
|
申请公布号 |
US6967147(B1) |
申请公布日期 |
2005.11.22 |
申请号 |
US20000714356 |
申请日期 |
2000.11.16 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
TEWS HELMUT HORST;BEINTNER JOCHEN |
分类号 |
H01L;H01L21/265;H01L21/28;H01L21/76;H01L21/8234;H01L21/8242;H01L27/06;(IPC1-7):H01L21/76 |
主分类号 |
H01L |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|