COMPOUND SEMICONDUCTOR ELEMENT AND PROCESS FOR FABRICATING THE SAME

摘要

A compound semiconductor element comprising a heterojunction bipolar transistor having a compound semiconductor substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer formed sequentially on that substrate as thin film crystal layers by vapor phase growth, wherein the base layer is a p-type compound semiconductor thin film containing C as dopant and the peak of an H-C a bonding mode C2-H is not detected in the measurement of infrared absorption at the room temperature.