| 摘要 |
<p>The device for photoelectric detection is in the form of a monolithic detector constituted of a semiconductor material (2) whose face comprises a set of detection electrodes (6) each electrically connectable to a read circuit and separated from adjacent electrodes by an inter-pixel insulating zone (7). The detection electrodes (6) corresponding to pixels and the inter-pixel zones (7) are situated at two different levels. The other face of the monolithic detector, that is the one orientated towards the incident beam of radiation, is covered with a polarization electrode. The detection surface is with electrodes (6), each corresponding to one pixel. The detection surface is subjected to a deep etcing at the level of the inter-pixel zones (7), as in the first embodiment, or to a deep etching at the level of the zones of the detection electrodes (6), as in the second embodiment. The semiconductor material is of type II-VI, for example CdZnTe, CdTe, CdTe:Cl, CdTeSe:Cl, CdZnTe:Cl, CdTe:In, CdZnTe:In. The detection electrodes (6) are covered with a thickening or recharge layer (14), which is also conducting. The inter-pixel zones (7) are treated to form a passivation layer (12), and filled or covered with an encapsulation layer (13).</p> |
