摘要 |
A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties. |
申请人 |
CASE WESTERN RESERVE UNIVERSITY;MEHREGANY, MEHRAN;ZORMAN, CHRISTIAN, A.;FU, XIAO-AN;DUNNING, JEREMY, L. |
发明人 |
MEHREGANY, MEHRAN;ZORMAN, CHRISTIAN, A.;FU, XIAO-AN;DUNNING, JEREMY, L. |