| 摘要 |
A semiconductor device for individually controlling an element to be driven, such as an electroluminescence element, includes a switching TFT which operates when a selection signal is applied to its gate and which also captures a data signal, and an element-driving TFT in which its drain is connected with a drive power source, its source is connected with the element to be driven, gate receives a data signal supplied from the switching TFT, for controlling electric power supplied from the drive power source to the element to be driven. The semiconductor device further includes a storage capacitor having a first electrode connected with the switching TFT and with the gate of the element-driving TFT and a second electrode connected between the source of the element-driving TFT and the element to be driven, for holding the gate-source voltage of the element-driving TFT in accordance with the data signal, and a switching element for controlling the potential of the second electrode of the storage capacitor. With such a configuration, all the above-described switches can be formed by TFTs of the same conductivity type and reliable supply of electric power to the element to be driven can be assured.
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