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发明名称
METHOD OF FORMING INTERMEDIATE INSULATING LAYER FOR SEMICONDUCTOR DEVICE
摘要
申请公布号
KR100529388(B1)
申请公布日期
2005.11.17
申请号
KR20030098545
申请日期
2003.12.29
申请人
发明人
分类号
H01L21/31;(IPC1-7):H01L21/31
主分类号
H01L21/31
代理机构
代理人
主权项
地址
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