METHOD OF MANUFACTURING A METAL SILICATE LAYER USING ATOMIC LAYER DEPOSITION TECHNIQUE,申请号KR20040099511-传众专利搜索

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发明名称	METHOD OF MANUFACTURING A METAL SILICATE LAYER USING ATOMIC LAYER DEPOSITION TECHNIQUE
摘要
申请公布号	KR20050109036(A)	申请公布日期	2005.11.17
申请号	KR20040099511	申请日期	2004.11.30
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, YUN SEOK;KIM, JONG PYO;LIM, HA JIN;LEE, JONG HO;PARK, JAE EUN;JUNG, HYUNG SUK;YANG, JONG HO
分类号	H01L21/205;(IPC1-7):H01L21/205	主分类号	H01L21/205
代理机构		代理人
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