发明名称 SWITCHING SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To switch a high-frequency signal from intermediate electric power to large electric power, with less distortions than before. <P>SOLUTION: A 1st unit switch 101 is composed of a series connection of 1st and 2nd FETs 11 and 12, and a 2nd unit switch 102 is composed of a series connection of 3rd and 4th FETs 13 and 14, respectively. High resistors 28, 29, 30, and 31 are connected between drains and sources of the FETs 11 to 14, respectively and operations of the respective FETs 11 to 14 become uniform, so that the high-frequency signal can be switched from the intermediate electric power to the large electric power with less distortions than before. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005323030(A) 申请公布日期 2005.11.17
申请号 JP20040138167 申请日期 2004.05.07
申请人 NEW JAPAN RADIO CO LTD 发明人 TOSAKA HIROYUKI;IKENAKA KAZUNARI;KURIHARA DAISUKE
分类号 H03K17/00;H03K17/693;(IPC1-7):H03K17/00 主分类号 H03K17/00
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