Semiconductor memory component in cross-point architecture

摘要

A programmable metallization memory cell with a storage region ( 3 ) formed from a chalcogenide glass and an electrode ( 4 ) which is preferably silver is located at the crossing point of a respective bit line ( 1 ) and a respective word line ( 2 ). There is a pn junction between the bit lines ( 1 ) and the chalcogenide glass.