| 摘要 |
A semiconductor device includes a conductive film that is filled in a trench formed in a semiconductor substrate via a first insulating film. The conductive film has a first portion and a second portion with an upper surface higher than the first portion. A second insulating film provided on the first portion of the conductive film has a first portion and a second portion whose upper surface is higher than the surface of the semiconductor substrate. The first portion of the second insulating film contacts the second portion of the second insulating film and has an upper surface lower than the surface of the second portion of the conductive film. A first gate electrode and a second gate electrode are provided on the second insulating film and above the semiconductor substrate, respectively. A connection conductive layer extends on the conductive film and on one of source/drain diffusion layers.
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