发明名称 Semiconductor device
摘要 A semiconductor device comprises a semiconductor layer; a stacked body; and an electrode pad provided on the stacked body. The stacked body is provided on the semiconductor layer and has a plurality of stacked layers. The electrode pad is provided on the stacked body. The stacked body has a subpad region that is located below the electrode pad and an extrapad region that is not located below the electrode pad, and any portion made of insulating material in the electrode subpad region except a contact plug layer directly above the semiconductor layer in the stacked body is surrounded by a metal interconnect having a closed structure in the same layer.
申请公布号 US2005253269(A1) 申请公布日期 2005.11.17
申请号 US20040015016 申请日期 2004.12.20
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. 发明人 TSUDA HIROSHI
分类号 H01L23/12;H01L21/60;H01L21/768;H01L23/485;H01L23/528;H01L27/14;(IPC1-7):H01L27/14 主分类号 H01L23/12
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