| 摘要 |
The invention provides a solid-state image pickup device with little gap in operation timings of the pixels, providing a sensor output of a high S/N ratio. In a solid-state image pickup device provided with a photoelectric conversion pixel unit formed by an array of a plurality of pixels each containing at least a photoelectric conversion unit and a transistor for amplifying a signal from the photoelectric conversion unit, and memory units formed by an array of analog memory cells corresponding to at least a part of the pixels of the photoelectric conversion pixel unit, there are provided plural coupling capacitors respectively connected to plural output lines each of which is connected to a column of pixels, for clamping a signal from a pixel thereby eliminating a noise from the pixel, and plural amplifiers for amplifying a signal voltage from the coupling capacitor with a gain exceeding unity and outputting an amplified signal for writing into the analog memory cell.
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