METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION

摘要

Disclosed is a method for forming an organic silica film which enables to efficiently cure a coating film with a lower dose of electron beam irradiation at a lower temperature in a shorter time. Such a method enables to form a film which is low in relative dielectric constant and excellent in mechanical strength, adhesiveness, plasma resistance and chemical resistance, and is suitably used as an interlayer insulating film for semiconductor devices or the like. Also disclosed are composition for film formation which is used in such a method, an organic silica film obtained by such a method, a wiring structure containing such an organic silica film, and a semiconductor device containing such a wiring structure. Such a method for forming an organic silica film comprises a step wherein a coating film composed of a silicon compound having an -Si-O-Si- structure and an -Si-CH2-Si- structure is formed on a base, a step for heating the coating film, and a step for curing the coating film through irradiation of an electron beam.