发明名称 |
METHODS OF FORMING A FIN FIELD EFFECT TRANSISTOR USING DAMASCENE PROCESS |
摘要 |
<p>A method of forming a fin transistor using a damascene process is provided. A filling mold insulation pattern is recessed to expose an upper portion of a fin, and a mold layer is formed. The mold layer is patterned to form a groove crossing the fin and exposing a part of the upper portion of the fin. A gate electrode is formed to fill the groove with a gate insulation layer interposed between the fin and the gate electrode, and the mold layer is removed. Impurities are implanted through both sidewalls and a top surface of the upper portion of the fin disposed at opposite sides of a gate electrode to form a source/drain region.</p> |
申请公布号 |
KR20050108916(A) |
申请公布日期 |
2005.11.17 |
申请号 |
KR20040034352 |
申请日期 |
2004.05.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN, YOUNG JOON;PARK, DONG GUN;LEE, CHOONG HO;KANG, HEE SOO |
分类号 |
H01L29/78;H01L21/265;H01L21/336;H01L21/8234;H01L21/8242;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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