| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that in fabrication of TFT that meets functions of various circuits, a structure of the TFT becomes complicated and consequently the number of steps is increased, which causes not only increase in production cost, but decrease in production yield. SOLUTION: An impurity having high concentration is added into a semiconductor layer using a resist having a tapered shape used in the preparation of a gate electrode having the tapered shape and a gate electrode having the tapered shape as masks, and then the gate electrode having the tapered shape is etched in a vertical direction using the resist as a mask, and an impurity having low concentration is added into a semiconductor layer below the tapered portion of the gate electrode removed in this way. COPYRIGHT: (C)2006,JPO&NCIPI
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