发明名称 |
Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices having recessed channels and methods of fabricating the same |
摘要 |
Unit cells of silicon-oxide-nitride-oxide-silicon (SONOS) memory devices are provided. The unit cells include an integrated circuit substrate and a SONOS memory cell on the integrated circuit substrate. The SONOS memory cell includes a source region, a drain region and a gate contact. The integrated circuit substrate defines a trench between the source and drain regions and the gate contact is provided in the trench. A floor of the trench extends further into the integrated circuit substrate than lower surfaces of the source and drain regions. Related methods of fabricating SONOS memory cells are also provided.
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申请公布号 |
US2005253189(A1) |
申请公布日期 |
2005.11.17 |
申请号 |
US20040999306 |
申请日期 |
2004.11.30 |
申请人 |
CHO MYOUNG-KWAN;HUR SUNG-HOI;CHO EUN-SUK |
发明人 |
CHO MYOUNG-KWAN;HUR SUNG-HOI;CHO EUN-SUK |
分类号 |
H01L21/336;H01L21/8246;H01L27/115;H01L29/423;H01L29/78;H01L29/792;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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