发明名称 |
SOI-like structure in a bulk semiconductor substrate and method of forming same |
摘要 |
Bulk silicon is transformed into an SOI-like structure by annealing. Trenches are formed in a bulk substrate to define device sites. The lower portions of the trenches are annealed at low pressure in a hydrogen atmosphere. This transforms the lower trench portions to expanded, spheroidal voids that extend under the device sites. Neighboring voids each reside about half way under an intervening site. A silicon-consuming process forms a liner on the walls of the voids, with the liners on neighboring voids abutting to isolate the intervening device site from the substrate and other device sites.
|
申请公布号 |
US2005253194(A1) |
申请公布日期 |
2005.11.17 |
申请号 |
US20040847607 |
申请日期 |
2004.05.17 |
申请人 |
YANG JI-YI;CHEN CHIEN-HAO;LEE TZE-LIANG;CHEN SHIH-CHANG;LIN HUAN-JUST |
发明人 |
YANG JI-YI;CHEN CHIEN-HAO;LEE TZE-LIANG;CHEN SHIH-CHANG;LIN HUAN-JUST |
分类号 |
H01L27/01;H01L27/12;(IPC1-7):H01L27/01 |
主分类号 |
H01L27/01 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|