发明名称 |
Method of fabricating inlaid structure |
摘要 |
A method of fabricating an inlaid structure. A sacrificial layer having a trench opening over a substrate is provided. A metal layer is deposited over the sacrificial layer filling the trench openings. A first CMP is performed to remove excess metal layer above the sacrificial layer to form an interconnect structure. The sacrificial layer is removed to expose the interconnect structure. A first dielectric layer is deposited over the substrate covering the interconnect structure. A second CMP is performed on the first dielectric layer to planarize the first dielectric layer.
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申请公布号 |
US2005255642(A1) |
申请公布日期 |
2005.11.17 |
申请号 |
US20040842454 |
申请日期 |
2004.05.11 |
申请人 |
LIU CHI-WEN;TSAO JUNG-CHIH |
发明人 |
LIU CHI-WEN;TSAO JUNG-CHIH |
分类号 |
H01L21/28;H01L21/302;H01L21/3105;H01L21/321;H01L21/336;H01L21/338;H01L21/461;H01L21/4763;H01L21/768;H01L29/49;(IPC1-7):H01L21/338;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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