发明名称 Method of fabricating inlaid structure
摘要 A method of fabricating an inlaid structure. A sacrificial layer having a trench opening over a substrate is provided. A metal layer is deposited over the sacrificial layer filling the trench openings. A first CMP is performed to remove excess metal layer above the sacrificial layer to form an interconnect structure. The sacrificial layer is removed to expose the interconnect structure. A first dielectric layer is deposited over the substrate covering the interconnect structure. A second CMP is performed on the first dielectric layer to planarize the first dielectric layer.
申请公布号 US2005255642(A1) 申请公布日期 2005.11.17
申请号 US20040842454 申请日期 2004.05.11
申请人 LIU CHI-WEN;TSAO JUNG-CHIH 发明人 LIU CHI-WEN;TSAO JUNG-CHIH
分类号 H01L21/28;H01L21/302;H01L21/3105;H01L21/321;H01L21/336;H01L21/338;H01L21/461;H01L21/4763;H01L21/768;H01L29/49;(IPC1-7):H01L21/338;H01L21/476 主分类号 H01L21/28
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