| 摘要 |
PROBLEM TO BE SOLVED: To suppress formation of abnormal oxides in the contact region of gate wiring. SOLUTION: A manufacturing method is provided for a semiconductor device having a field effect transistor. This method comprises the steps of forming a semiconductor film on the main surface of a semiconductor substrate, implanting ions of an impurity for reducing the resistance value of the semiconductor film, forming the wiring including the gate electrode and the contact region, forming a metal-semiconductor reaction layer on the surface of the wiring, forming an insulating film on the main surface of the semiconductor substrate to cover the wiring, and forming a connection hole on the contact region of the wiring by etching the insulating film. The impurity ion implantation step is carried out, in a state where the part of the semiconductor film to be the contact region of the wiring is covered with a mask. COPYRIGHT: (C)2006,JPO&NCIPI |
