| 摘要 |
PROBLEM TO BE SOLVED: To provide film deposition equipment using an ALD material supply system which can form many kinds of thin films such as a metal film, a metal oxide film, or a mixed film of two or more kinds of these films with uniformity in film thickness along the plane and in composition at good reproducibility. SOLUTION: The ALD film deposition equipment comprises an ALD reactor 101, a wafer 102, a susceptor 103, and a heater 104. A main carrier gas is divided into two parts and are passed through a double injector, the ALD reactor, a throttle valve, etc., and then is exhausted. A film deposition material or an oxidant is stored in a material tank set to such a temperature as to allow the film deposition material or the oxidant to have sufficient high steam pressure. The carrier gas is supplied to an entrance valve of the material tank, and the film deposition material or oxidant is transported out of the tank on the carrier gas through an exit valve. A main carrier gas line is divided into two lines, each of which is equipped with a plurality of three way valves 4. Film deposition materials of different kinds are supplied to one line while oxidants or reducing agents of different kinds are supplied to the other line, which makes it possible to directly supply individual gases to the main carrier gas lines without mixing them. COPYRIGHT: (C)2006,JPO&NCIPI
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