发明名称 |
Semiconductor device including isolation trench and method for fabricating the same |
摘要 |
Provided is a trench isolation for a semiconductor device. The device includes an insulating layer formed on the inner surface of a trench and includes at least an N-containing CVD oxide layer, and a nitride liner formed on the insulating layer.
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申请公布号 |
US2005255669(A1) |
申请公布日期 |
2005.11.17 |
申请号 |
US20050095569 |
申请日期 |
2005.04.01 |
申请人 |
KANG SUNG-TAEG;HAN JEONG-UK;PARK SUNG-WOO |
发明人 |
KANG SUNG-TAEG;HAN JEONG-UK;PARK SUNG-WOO |
分类号 |
H01L21/76;B81C1/00;H01L21/762;H01L21/8234;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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