发明名称 |
THIN FILM SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To obtain a thin film semiconductor substrate which is suitable for a substrate for a solar cell and a substrate for a TFT by crystallizing a large area uniformly. SOLUTION: The thin film semiconductor substrate is formed on a glass substrate 01 as a different species substrate, and provided with a polycrystalline silicon film 05 crystallized by the scanning of a laser. Crystal grains of the polycrystalline silicon film 05 are made which are substantially continuously grown into almost certain one direction which is not parallel and not perpendicular to scanning direction of the laser. A silicon oxide film 02 as an insulator is formed between the glass substrate 01 and the polycrystalline silicon film 05. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2005322842(A) |
申请公布日期 |
2005.11.17 |
申请号 |
JP20040141234 |
申请日期 |
2004.05.11 |
申请人 |
HITACHI CABLE LTD |
发明人 |
OKA FUMITO;MURAMATSU SHINICHI;NOMURA KATSUMI |
分类号 |
H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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