| 摘要 |
Disclosed herein are a NAND flash memory device and a method of forming a well of the NAND flash memory device. Triple wells of a NAND flash memory device are formed within a cell region in plural. A cell block including flash memory cells is formed on the triple wells. Accordingly, during an erase operation of a flash memory device, a stress time for non-selected blocks can be reduced and erase disturbance can be also prevented, through the plurality of the wells. Further, capacitance between the triple P wells and the triple N well is reduced since triple P wells are divided. Therefore, well bias charging and discharging time can be reduced and an overall erase time budget can be thus reduced. |
