| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve light emission efficiency and a light radiation extracting efficiency of a GaN based semiconductor light-emitting device by forming a transparent electrode to be replaced by an ITO electrode film, at the light exit side of the GaN-based semiconductor light-emitting device, because there is provided a high light transmittance of emitted light by an ITO electrode film employed conventionally, there occurs a formation of a Schottky type contact between the ITO electrode film and a p-type GaN-based semiconductor layer, resulting in a non uniform flow of an electric current. <P>SOLUTION: The semiconductor light-emitting device includes a light-emitting layer, made of a GaN-based semiconductor interposed between an n-type GaN-based semiconductor layer and a p-type GaN-based semiconductor layer, and a Ga-doped or B-doped Mg<SB>z</SB>Zn<SB>1-z</SB>O (0≤z<1) electrode film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
