SUBSTRATE-PROCESSING APPARATUS AND SUBSTRATE-PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an apparatus for etching the edge of the top surface and the undersurface of a wafer. SOLUTION: The apparatus has a substrate support part for supporting the wafer and a protective part for preventing etching liquid from flowing into an etched part of the wafer. Further, etching is performed on the edge of the top surface and the undersurface of the wafer by wet etching, and etching is performed on a boundary between the etched part and the edge of the wafer by dry etching. COPYRIGHT: (C)2006,JPO&NCIPI