| 摘要 |
PROBLEM TO BE SOLVED: To laminate field effect transistors, while suppressing deterioration of crystallinity of semiconductor layers on which the field effect transistors are formed. SOLUTION: The manufacturing method of a semiconductor device includes steps of laminating single-crystal semiconductor layers 51, 33, 52, 35 in order on a semiconductor substrate 31; forming insulating layers 32, 34 between the semiconductor substrate 31 and the single-crystal semiconductor layers 33, 35 by thermally oxidizing the semiconductor substrate 31 and the single-crystal semiconductor layers 33, 35 after the single-crystal semiconductor layers 51, 52 are removed; forming a gate electrode 44c on side walls at both sides of the single-crystal semiconductor layers 33, 35 through gate insulating films 43a, 43b formed on the sidewalls at both sides of the single crystal semiconductor layers 33, 35 respectively; forming source/drain layers 45a, 45b arranged at both sides of the gate electrode 44c, respectively on the single crystal semiconductor layer 33; and forming source/drain layers 46a, 46b arranged at both sides of the gate electrode 44c, respectively on the single-crystal semiconductor layer 35. COPYRIGHT: (C)2006,JPO&NCIPI
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