| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing GaN based semiconductor devices for high precision processes, by improving the adhesion of mask for dry etching to the surface of etching material. SOLUTION: A Ti film 22 and an Ni film 24 are laminated, in this order, on a GaN-based semiconductor layer of etching material and a substrate 21 of SiC or sapphire, for film formation by vacuum deposition. The laminated film is patterned by photolithographic method to form a mask. If the etching base body is, for example, the SiC substrate, the thermal expansion coefficient of SiC is 4.2×10<SP>-6</SP>/°C and that of Ni is 12.8×10<SP>-6</SP>/°C. By providing the Ti film 22, whose thermal expansion coefficient is 9.0×10<SP>-6</SP>/°C, the distortion generated by thermal expansion due to the rise of the temperature during etching is reduced to improve adhesion of the mask to the SiC substrate surface, resulting in suppressing of the occurrence of peeling or cracking. COPYRIGHT: (C)2006,JPO&NCIPI
|
