| 发明名称 |
A METHOD OF LASER ETCHING A STRUCTURE BY FIRST RADIATING AREAS OF THE STRUCTURE FOR ALTERING THE CRYSTALLINITY |
| 摘要 |
<p>An etching method (10) includes applying a first electromagnetic radiation (24) to an area (42) of structure (40), thereby altering a characteristic of the structure (40) in the area (42), and applying a second electromagnetic radiation (34) to the structure (40), the second electromagnetic radiation (34) configured to selectively ablate the structure (40) based on the characteristic, wherein the characteristic, in a preferred embodiment, is crystallinity.</p> |
| 申请公布号 |
WO2005108000(A1) |
申请公布日期 |
2005.11.17 |
| 申请号 |
WO2005US13180 |
申请日期 |
2005.04.18 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;NELSON, CURT;LONG, GREG |
发明人 |
NELSON, CURT;LONG, GREG |
| 分类号 |
B01J19/12;B23K26/06;B23K26/40;B23K26/42;C23F4/00;H01L21/268;(IPC1-7):B23K26/40 |
主分类号 |
B01J19/12 |
| 代理机构 |
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代理人 |
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