SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD FOR PROCESSING SAME

摘要

Disclosed are a substrate for electronic devices such as semiconductor devices and a method for processing the same. In the processing method, firstly a substrate for electronic devices is prepared and an insulating film (I) composed of a fluorocarbon (CF) is formed on the surface of the substrate. Then, fluorine (F) atoms exposed in the surface of the insulating film (I) are removed therefrom by bombarding the surface of the insulating film (I) with, for example, activated species (Kr<+>) produced in a krypton (Kr) gas plasma. In this connection, the substrate is kept out of contact with moisture at least from immediately after the insulating film forming step until completion of the fluorine atom removing step.