发明名称 PROTECTIVE CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a protective circuit that prevents a field-effect transistor provided between a DC power source and a load from being interrupted unnecessarily and that can reliably protect the field-effect transistor and power lines. <P>SOLUTION: A MOSFET Q1 is provided between a battery B and the load 10. A series circuit constituted of a Zener diode ZD1 and a transistor Q31 is provided between the gate and the source of the MOSFET Q1. If an overcurrent causes a voltage Vds between the drain and the source of the MOSFET Q1 to exceed a reference voltage Vref1, a comparator CP1 turns on the transistor Q31 to clamp the voltage between the drain and the source of the MOSFET Q1 to the Zener voltage Vzd1 of the Zener Diode ZD1 so that the overcurrent is suppressed. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005323489(A) 申请公布日期 2005.11.17
申请号 JP20040351108 申请日期 2004.12.03
申请人 YAZAKI CORP 发明人 YABE HIROO
分类号 H02H3/087;H02H3/093;H02H7/00;H02H7/20 主分类号 H02H3/087
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