| 摘要 |
PROBLEM TO BE SOLVED: To protect a circuit element from plasma charge and static electricity in a manufacturing process. SOLUTION: There are provided a first-conductivity-type impurity layer 25b functioning as the source or drain of a transistor; a first high-concentration conductivity-type impurity layer 27b that is formed at the bottom of the first-conductivity-type impurity layer 25b, and contains a high concentration of impurities as compared with the first-conductivity-type impurity layer 25b; a second-conductivity-type impurity layer 28b formed under the first high-concentration conductivity-type impurity layer 27b by introducing second-conductivity-type impurities; an interlayer insulating film 6 formed on a semiconductor substrate; a connection hole 6a that is formed on the interlayer insulating film 6a and is positioned on the first-conductivity-type impurity layer; and wires 9a, 9b that are formed on the interlayer insulating film 6 and are connected to the first-conductivity-type impurity layer 25b by burying one portion in the connection hole 6a. A diode for discharging is composed of the second-conductivity-type impurity layer 28b and the first high concentration conductivity-type impurity layer 27a. COPYRIGHT: (C)2006,JPO&NCIPI
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