发明名称 SEMICONDUCTOR MEMORY DEVICE FOR CONTROLLING DATA OUTPUT TIMING BY FREQUENCY VARIATION
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device which detects the region of the present operation frequency and which can control the output timing of data in response thereto. SOLUTION: The semiconductor memory device is provided with: a frequency detection part for detecting the operation frequency by detecting the degree in which a delay fixed clock of a delay fixed loop leads when compared with an external clock signal; an output enable control part for outputting an output enable signal in response to the CAS latency and for adjusting the output timing of the output enable signal by the frequency detected by the frequency detection part; and a data output buffer for outputting the data transmitted from a memory core area in response to the output enable signal. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005322374(A) 申请公布日期 2005.11.17
申请号 JP20040195066 申请日期 2004.06.30
申请人 HYNIX SEMICONDUCTOR INC 发明人 LEE HYUN-WOO
分类号 H03K5/19;G11C7/00;G11C7/10;G11C11/407;H03K5/00;H03K19/0175;H03L7/06;H03L7/081;(IPC1-7):G11C11/407;H03K19/017 主分类号 H03K5/19
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