Semiconductor devices on misoriented substrates

摘要

A semiconductor device ( 100 ) includes a misoriented substrate ( 240 ) having a surface area inclined in a range of about 8 to 40 degrees from the {100} plane. At least one highly doped P-type semiconductor layer ( 106 ) of a first semiconductor material doped with Carbon (C) is grown over the surface area. At least one highly doped N-type semiconductor layer ( 104 ) of a second semiconductor material is grown over the surface area and near the at least one highly doped P-type semiconductor layer ( 106 ). A moderately doped P-type layer ( 60 ) is grown over the surface area, wherein the moderately doped P-type layer 60 has a third semiconductor material doped with a dopant selected as a member from the group consisting of Zn, Be, Cd and Mg. The devices 100 include VCSELs having tunnel junctions ( 110 ) and semiconductor DBRs ( 230 ) composed of AlGaInAs/InP or GaInAs/InP layers ( 2308/2302 ) on misoriented substrates 240.