发明名称 |
Field effect transistor (FET) devices and methods of manufacturing FET devices |
摘要 |
In one aspect, a semiconductor substrate is provided having a cell area and a peripheral circuit area, and a mask layer is formed over the cell area and the peripheral circuit area of the semiconductor substrate. A FinFET gate is fabricated by forming a first opening in the mask layer to expose a first gate region in the cell area of the semiconductor substrate, and then forming a FinFET gate electrode in the first opening using a damascene process. A MOSFET gate fabricated by forming a second opening in the mask layer to expose a second gate region in the peripheral circuit area of the semiconductor substrate, and then forming a MOSFET gate electrode in the second opening using a damascene process.
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申请公布号 |
US2005255656(A1) |
申请公布日期 |
2005.11.17 |
申请号 |
US20050080731 |
申请日期 |
2005.03.16 |
申请人 |
KANG HEE-SOO;PARK DONG-GUN;LEE CHOONG-HO;CHO HYE-JIN;AHN YOUNG-JOON |
发明人 |
KANG HEE-SOO;PARK DONG-GUN;LEE CHOONG-HO;CHO HYE-JIN;AHN YOUNG-JOON |
分类号 |
H01L29/78;H01L21/00;H01L21/336;H01L21/822;H01L21/8244;H01L21/84;H01L27/06;H01L27/11;H01L27/12;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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