发明名称 Method of fabricating stacked semiconductor device
摘要 A method for fabricating a stacked semiconductor device has the steps of: a) Attach a temporary base on a side of a substrate having a conductor pattern and a cavity. b) Provide a first die in the cavity of the substrate and attach it on the temporary base and electrically connect it to the conductor pattern via wires. c) Stack a second die on the first die and electrically connect it to the conductor pattern via wires. d) Provide an insulating layer on the substrate and in the cavity to embed the first die and the second die, and e) remove the temporary base.
申请公布号 US2005255632(A1) 申请公布日期 2005.11.17
申请号 US20040844507 申请日期 2004.05.13
申请人 STACK DEVICES CORP. 发明人 BIAR JIN-CHYUNG;YAO WU-CHIANG;HUANG CHI-PANG
分类号 H01L21/44;H01L21/56;H01L21/68;H01L21/98;H01L23/31;H01L25/065;(IPC1-7):H01L21/44 主分类号 H01L21/44
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