发明名称 Semiconductor thermal process control
摘要 During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.
申请公布号 US2005254804(A1) 申请公布日期 2005.11.17
申请号 US20050103968 申请日期 2005.04.11
申请人 APPLIED MATERIALS, INC. 发明人 ADERHOLD WOLFGANG R.;RAMACHANDRAN BALASUBRAMANIAN;TERTITSKI LEONID M.;STONE PATRICK F.
分类号 H01L21/00;(IPC1-7):F26B3/30 主分类号 H01L21/00
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