QUANTUM DOT DEVICES HAVING PROXIMITY-PLACED ACCEPTOR IMPURITIES
摘要
Solid state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region (215) forming a quantum dot heterostructure (fig. 2b) having a plurality of quantum dot layers (240) each having discrete quantum hole states and a p-type impurity layer (245) formed proximate to at least one of the quantum dot layers (240) to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.
申请公布号
WO2004064207(A3)
申请公布日期
2005.11.17
申请号
WO2004US00178
申请日期
2004.01.06
申请人
UNIVERSITY OF TEXAS;DEPPE, DENNIS, G.;SHCHEKIN, OLEG, B.