| 摘要 |
It is an object to suppress a change in a characteristic of a semiconductor device with a removal of a hard mask while making the most of an advantage of a gate electrode formed by using the hard mask. A gate electrode ( 3 ) is formed by etching using a hard mask as a mask and the hard mask remains on an upper surface of the gate electrode ( 3 ) at a subsequent step. In the meantime, the upper surface of the gate electrode ( 3 ) can be therefore prevented from being unnecessarily etched. The hard mask is removed after ion implantation for forming a source-drain region. Consequently, the influence of the removal of the hard mask on a characteristic of a semiconductor device can be suppressed. In that case, moreover, a surface of a side wall ( 4 ) is also etched by a thickness of (d) so that an exposure width of an upper surface of the source-drain region is increased. After the removal of the hard mask, it is easy to salicide the gate electrode ( 3 ) and to form a contact on the gate electrode ( 3 ). |
