| 发明名称 |
SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATING THE SAME |
| 摘要 |
<p>A lower electrode film, a ferroelectric film (10) and an upper electrode film are formed on a semiconductor substrate. Subsequently, the upper electrode film is patterned to form an upper electrode (11a) and a dummy electrode (11b). Total area of the upper electrode (11a) and the dummy electrode (11b) is set at 5% or above of the area of the semiconductor substrate. Subsequently, the upper electrode (11a) is connected with a transistor or wiring but the dummy electrode (11b) is not connected with another element or the like.</p> |
| 申请公布号 |
WO2005109508(A1) |
申请公布日期 |
2005.11.17 |
| 申请号 |
WO2004JP06115 |
申请日期 |
2004.04.28 |
| 申请人 |
FUJITSU LIMITED;SUEZAWA, KENKICHI;OKITA, YOICHI;SAIGOH, KAORU |
发明人 |
SUEZAWA, KENKICHI;OKITA, YOICHI;SAIGOH, KAORU |
| 分类号 |
H01L21/02;H01L21/8239;H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):H01L27/105;H01L21/823 |
主分类号 |
H01L21/02 |
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