| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an antireflection film which has a high antireflection effect, with which a photoresist pattern having no large footing in the lower part can be formed without causing to intermix with a photoresist, and which can be used for lithographic processes using irradiation light such as an ArF excimer laser and a F2 excimer laser, and to provide a composition for forming the antireflection film. <P>SOLUTION: The composition for forming the antireflection film contains a reaction product obtained by the reaction of an isocyanuric acid compound having two or three 2,3-epoxypropyl groups with a benzoic acid compound. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
