MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a MISFET type semiconductor device ensuring higher avalanche resistance voltage, and also to provide a manufacturing method thereof. SOLUTION: In the MISFET type semiconductor device in which an n-type semiconductor pillar region and a p-type semiconductor pillar region are provided over a semiconductor substrate, generation of avalanche breakdown under an electrode pad and a gate wiring can be prevented by forming these gate electrode pad and gate wiring on the n--type region in place of the semiconductor pillar region, and thereby the avalanche resistance voltage of the semiconductor device is improved. COPYRIGHT: (C)2006,JPO&NCIPI