Laser annealing device and method for producing thin-film transistor

摘要

A laser annealing device ( 10 ) includes a laser oscillator ( 12 ), radiating a pulsed laser light beam of a preset period, and an illuminating optical system ( 15 ) for illuminating a pulsed laser light beam to an amorphous silicon film ( 1 ). The illuminating optical system ( 15 ) manages control for moving a laser spot so that a plural number of light pulses will be illuminated on the same location on the amorphous silicon film ( 1 ). The laser oscillator ( 12 ) radiates a laser light beam of a pulse generation period shorter than the reference period. The reference period is a time interval as from the radiation timing of illumination of a pulsed laser light beam on the surface of the film ( 1 ) until the timing of reversion of the substrate temperature raised due to the illumination of the laser light beam to the original substrate temperature.